UBER DIE ROENTGENOGRAPHISCHE ANALYSE DER MITTLEREN QUADRATISCHEN ATOMVERSCHIEBUNGEN IN EINIGEN HALBLEITERKRISTALLEN. = ANALYSE RX DES DEPLACEMENTS ATOMIQUES QUADRATIQUES MOYENS DANS QUELQUES CRISTAUX DE SEMICONDUCTEURSBUBLIK V; GORELIK SS.1977; KRISTALL U. TECH.; DTSCH.; DA. 1977; VOL. 12; NO 8; PP. 859-869; ABS. ANGL.; BIBL. 18 REF.Article

Exact solutions of the axisymmetric equations of motion of a viscous heat-conducting perfect gas described by systems of ordinary differential equationsBUBLIK, V. V.Journal of applied mechanics and technical physics. 1999, Vol 40, Num 5, pp 820-823, issn 0021-8944Article

Analiz istochnikov oshibok dispersionnogo metoda opredeleniya vliyaniya neodnorodnostej atmosfery pri difraktsionnykh stvornykh nablyudeniyakhBUBLIK, V. E.Izvestiâ vysših učebnyh zavedenij. Geodeziâ i aerofotosëmki. 1984, Num 6, pp 44-48, issn 0536-101XArticle

Group classification of the two-dimensional equations of motion of a viscous heat-conducting perfect gasBUBLIK, V. V.Journal of applied mechanics and technical physics. 1996, Vol 37, Num 2, pp 170-176, issn 0021-8944Article

Regular, partially invariant solutions of RANK 1 and DEFECT 1 of equations of plane motion of a viscous heat-conducting GASBUBLIK, V. V.Journal of applied mechanics and technical physics. 2006, Vol 47, Num 6, pp 790-799, issn 0021-8944, 10 p.Article

The influence of GaAs crystal composition on the features of matrix microdefectsCHARNIY, L; BUBLIK, V.Journal of crystal growth. 1994, Vol 135, Num 1-2, pp 302-308, issn 0022-0248Article

Méthode de détermination de l'influence des hétérogénéités de l'atmosphère lors des mesures d'alignement par diffractionBUBLIK, V. E; KLYUSHIN, E. B.Izvestiâ vysših učebnyh zavedenij. Geodeziâ i aerofotosëmki. 1983, Num 5, pp 49-52, issn 0536-101XArticle

X-ray diffuse scattering identification of interstitial atom aggregates in Si-doped GaAs single crystalsMOROZOV, A. N; BUBLIK, V. T.Journal of crystal growth. 1989, Vol 97, Num 2, pp 475-482, issn 0022-0248Article

Use of precision density and lattice parameter measurements for study of point defects in single crystals of semiconductors. II: Determination of homogeneity regions of compounds, the Vegard law applicationMOROZOV, A. N; BUBLIK, V. T.Journal of crystal growth. 1986, Vol 75, Num 3, pp 497-503, issn 0022-0248Article

Identification des amas d'atomes interstitiels dans les monocristaux d'arséniure de gallium dopé au silicium par diffusion diffuse des rayons XMOROZOV, A. N; BUBLIK, V. T.Fizika tverdogo tela. 1989, Vol 31, Num 6, pp 50-56, issn 0367-3294Article

REALISATION EXPERIMENTALE DU LOGICIEL D'UN SYSTEME DE CALCUL MODERNEGREBNEV VA; KAPITONOVA YU V; LETICHEVSKIJ AA et al.1974; KIBERNETIKA, U.S.S.R.; S.S.S.R.; DA. 1974; NO 6; PP. 7-11; ABS. ANGL.; BIBL. 9 REF.Article

Use of precision density and lattice parameter measurements for study of point defects in single crystals of semiconductors. I: Measurements of the net point defect concentrationMOROZOV, A. N; BUBLIK, V. T.Journal of crystal growth. 1986, Vol 75, Num 3, pp 491-496, issn 0022-0248Article

Diffuse scattering by microdefects in siliconZOTOV, N. M; BUBLIK, V. T.Inorganic materials. 1996, Vol 32, Num 7, pp 692-695, issn 0020-1685Article

K voprosu o provedenii difraktsionnykh stvornykh izmerenij v neodnorodonoj srede s postoyannym gradientom pokazatelya prelomleniyaBUBLIK, V. E; TARASOV, V. V; SHERESHEV, A. B et al.Izvestiâ vysših učebnyh zavedenij. Geodeziâ i aerofotosëmki. 1986, Num 5, pp 32-38, issn 0536-101XArticle

On the mechanism of semi-insulating property formation in In-doped GaAsMOROZOV, A. N; BUBLIK, V. T; ANASTAS'EVA, N. A et al.Journal of crystal growth. 1989, Vol 97, Num 2, pp 483-488, issn 0022-0248Article

Diffusion en diffraction des rayons X par des microdéfauts dans le silicium obtenu par la méthode de CzochralskiKOV'EV, EH. K; BUBLIK, V. T; POSTOLOV, V. G et al.Fizika tverdogo tela. 1985, Vol 27, Num 4, pp 1246-1248, issn 0367-3294Article

Clusters of native point defects and high-coercive state in films of Ca,Ge-substituted magnetic garnetBUBLIK, V. T; TKALICH, A. K; SHUPEGIN, M. L et al.Journal of crystal growth. 1994, Vol 140, Num 1-2, pp 84-90, issn 0022-0248Article

Microdefect density determination by X-ray Huang scattering normalized over thermal diffuse scatteringCHARNYI, L. A; SHERBACHEV, K. D; BUBLIK, V. T et al.Physica status solidi. A. Applied research. 1991, Vol 128, Num 2, pp 303-309, issn 0031-8965Article

Effect of In and Sb vacancies on temperature dependence of InSb lattice parameter at high temperaturesMOROZOV, A. N; ABAEVA, T. V; BUBLIK, V. T et al.Crystal research and technology (1979). 1986, Vol 21, Num 5, pp 613-618, issn 0232-1300Article

Native point defects and nonstoichiometry in GaAs(I). Homogeneity region of gallium arsenideMOROZOV, A. N; BUBLIK, V. T; MOROZOVA, O. Y et al.Crystal research and technology (1979). 1986, Vol 21, Num 6, pp 749-754, issn 0232-1300Article

Native point defects and nonstoichiometry in GaAs. II: Mechanism of formation and degradation of semiinsulating properties of undoped gallium arsenide crystalsMOROZOV, A. N; BUBLIK, V. T; MOROZOVA, O. YU et al.Crystal research and technology (1979). 1986, Vol 21, Num 7, pp 859-865, issn 0232-1300Article

Nature et concentration des défauts ponctuels intrinsèques dans les monocristaux de InP non dopés. II. Domaine d'homogénéité du phosphure d'indiumMOROZOV, A. N; BUBLIK, V. T; GRIGOR'EVA, T. P et al.Kristallografiâ. 1984, Vol 29, Num 4, pp 757-763, issn 0023-4761Article

Formation de défauts dans l'arséniure de gallium à dopage nucléaireKOLIN, N. G; BUBLIK, V. T; OSVENSKIJ, V. B et al.Fizika i himiâ obrabotki materialov. 1987, Num 3, pp 28-33, issn 0015-3214Article

Nature of domain boundary fixing centers in ferrite-garnet films of nonstoichiometric compositionBUBLIK, V. T; TKALICH, A. K; SHUPEGIN, M. L et al.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 444-445, issn 0038-5638Article

Défauts ponctuels intrinsèques des cristaux de silicium sans dislocations fortement dopés par l'arsenicANASTAS'EVA, N. A; BUBLIK, V. T; MOROZOV, A. N et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 3, pp 473-479, issn 0015-3222Article